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| KSC4010 KSC4010 Audio Power Amplifier * * * * High Current Capability : IC=6A High Power Dissipation Wide S.O.A Complement to KSA3010 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 120 120 5 6 12 60 150 - 50 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol ICBO IEBO BVCEO hFE VCE(sat) VBE(on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB= 120V, IE= 0 VEB= 5V, IC= 0 IC= 5A,, IB= 0 VCE= 5V, IC= 1A, IC= 5A, IB= 0.5A VCE= 5V, IC= 5A VCE= 5V, IC= 1A VCB=10V, IE=0, f=1MHz Min. 120 55 Typ. 30 90 Max. 10 10 160 2.5 1.5 V V MHz pF Units A A V hFE Classification Classification hFE R 55 ~ 110 O 80 ~ 160 (c)2001 Fairchild Semiconductor Corporation Rev. B2, Septmeber 2001 KSC4010 Typical Characteristics 10 IC(A), COLLECTOR CURRENT 9 8 7 6 5 IB=50mA hFE, DC CURRENT GAIN A 00m IB=1 =90mA IB mA IB=80 A IB=70m IB=60mA 1000 VCE=5V Ib=40mA IB=30mA IB=20mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 TC=100 C TC=25 C o o 100 IB=10mA 10 0.1 1 10 VCE(V), COLLECTOR EMITTER VOLTAGE IC(A), COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC=10IB 9 VCE=5V VCE(sat), SATURATION VOLTAGE IC(A), COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0.2 1 TC=100 C TC=25 C o o 0.1 TC=25 C TC=100 C o o 0.01 0.01 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 IC(A), COLLECTOR CURRENT VBE(V), BASE EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 100 90 IC[A], COLLECTOR CURRENT PC(W), POWER DISSIPATION IC MAX. (Pulse) 10 10 0 DC m 80 70 60 50 40 30 20 10 0 0 25 50 o s IC MAX. (DC) 1 m 10 s 0.1 *SINGLE NONREPETITIVE PULSE TC =25[ C] 0.01 0.1 1 10 100 o VCEO MAX 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC( C), CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. B2, Septmeber 2001 KSC4010 Package Demensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. B2, Septmeber 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H4 |
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